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VISHAY
SFH6916
Vishay Semiconductors
Optocoupler, Phototransistor Output, Quad Channel, SOP-16, Half Pitch Mini-Flat Package
Features
* SOP (Small Outline Package) * Isolation Test Voltage, 3750 VRMS (1.0 s) * High Collector-Emitter Voltage, VCEO = 70 V * Low Saturation Voltage * Fast Switching Times * Temperature Stable * Low Coupling Capacitance * End-Stackable, 0.050 " (1.27 mm) Spacing
A1 C2 A3 C4 A C A
i179076
16 C 15 E 14 C 13 E 12 C 11 E 10 C 9E
5 6 7 8
C
Agency Approvals
* UL File #E52744 System Code U
The coupling devices are designed for signal transmission between two electrically separated circuits.
Description
The SFH6916 has a GaAs infrared emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 16-pin 50 mil lead pitch miniflat package. It features a high current transfer ratio, low coupling capacitance, and high isolation voltage.
Order Information
Part SFH6916 Remarks CTR 50 - 300 %, SMD-16
For additional information on the available options refer to Option Information.
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Reverse voltage DC Forward current Surge forward current Total power dissipation tp 10 s Test condition Symbol VR IF IFSM Pdiss Value 6.0 50 2.5 80 Unit V mA A mW
Document Number 83687 Rev. 1.4, 20-Apr-04
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SFH6916
Vishay Semiconductors Output
Parameter Collector-emitter voltage Emitter-collector voltage Collector current tp 1.0 ms Total power dissipation per channel Test condition Symbol VCE VEC IC IC Pdiss Value 70 7.0 50 100 150
VISHAY
Unit V V mA mA mW
Coupler
Parameter Isolation test voltage between emitter and detector (1.0 s) Creepage Clearance Comparative tracking index per DIN IEC 112/VDEo 303, part 1 Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Storage temperature range Ambient temperature range Junction temperature Soldering temperature Total power dissipation max. 10 s dip soldering distance to seating plane 1.5 mm Ptot RIO RIO Tstg Tamb Tj Test condition Symbol VISO Value 3750 5.33 5.08 175 1012 1011 - 55 to + 125 - 55 to +100 100 260 70 C C C C mW Unit VRMS mm mm
Electrical Characteristics
Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Tamb = 25 C (except where noted) Parameter Forward voltage Reverse current Capacitance Thermal resistance Test condition IF = 5 mA VR = 6.0 V CO Symbol VF IR CO Rthja Min Typ. 1.15 0.01 14 1000 Max 1.4 10 Unit V A pF K/W
Output
Parameter Collector-emitter leakage current Collector-emitter capacitance Thermal resistance Test condition VCE = 20 V VCE = 5.0 V, f = 1.0 MHz Symbol ICEO CCE Rthja 2.8 500 Min Typ. Max 100 Unit nA pF K/W
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Document Number 83687 Rev. 1.4, 20-Apr-04
VISHAY
Coupler
Parameter Collector-emitter saturation voltage Coupling capacitance Test condition IF = 20 mA, IC = 1.0 mA f = 1.0 MHz Symbol VCESAT CC Min Typ. 0.1 1.0
SFH6916
Vishay Semiconductors
Max 0.4
Unit V pF
Current Transfer Ratio
Parameter Current Transfer Ratio Test condition IF = 5.0 mA, VCC = 5.0 V Symbol CTR Min 50 Typ. 300 Max Unit %
Switching Characteristics
Switching Operation (without saturation) Parameter Rise time Fall time Turn on time Turn off time Test condition IC = 2.0 mA, VCC = 10 V, RL = 100 IC = 2.0 mA, VCC = 10 V, RL = 100 IC = 2.0 mA, VCC = 10 V, RL = 100 IC = 2.0 mA, VCC = 10 V, RL = 100 Test condition IF = 16.0 mA, VCC = 5.0 V, RL = 1.9 k IF = 16.0 mA, VCC = 5.0 V, RL = 1.9 k IF = 16.0 mA, VCC = 5.0 V, RL = 1.9 k IF = 16.0 mA, VCC = 5.0 V, RL = 1.9 k Symbol tr tf ton toff Min Typ. 4.0 3.0 5.0 4.0 Max Unit s s s s
Switching Operation (with saturation) Parameter Rise time Fall time Turn on time Turn off time Symbol tr tf ton toff Min Typ. 15 0.5 1.0 30 Max Unit s s s s
IF IF RL=100 IC VCC = 10 V 50 50
RL=1.9 k IC VCC = 5 V
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Fig. 2 Switching Operation (with Saturation) Fig. 1 Switching Operation (without Saturation)
Document Number 83687 Rev. 1.4, 20-Apr-04
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SFH6916
Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified)
1.6 T = -25C
Forward Voltage, VF (V) Collector Current (mA)
VISHAY
100.000 T = -25C 10.000 1.000 0.100 0.010
1.4
T = 0C
1.1 T = 100C T = 75C T = 50C T = 25C 0.10 1.00 10.00 Forward Current, IF (mA) 100.00
IF = 25 mA IF = 10 mA IF = 5.0 mA IF = 2.0 mA IF = 1.0 mA
0.9
0.6 0.01
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0.001 0.0 0.2 0.4 0.6 0.8 1.0 Collector-emitter Saturation Voltage, VCE (sat) (V)
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Fig. 3 Diode Forward Voltage vs. Forward Current
Fig. 6 Collector Current vs. Collector-Emitter Saturation Voltage
80
Collector Current, IC (mA)
1.4
Normalized Output Current, CTR
70 60 50 40 30 20 10 0 0 2 4 6 8 Collector to Emitter Voltage, VCE (V) 10 IF = 5 mA IF = 20 mA IF = 15 mA IF = 10 mA IF = 30 mA
1.2 1.0 0.8 0.6 0.4 0.2 0.0 -60 Normalized to 1.0 at TA = 25 C IF = 1.0 mA, VCE = 5.0 V -40 -20 0 20 40 60 Ambient Temperature, TA (C) 80 100
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iSFH6916_07
Fig. 4 Collector Current vs. Collector Emitter Voltage
Fig. 7 Normalized Output Current vs. Ambient Temperature
Collector to Emitter Dark Current, ICEO (nA)
Normalized Output Current, CTR
1000.0 24 V 100.0 40 V
1.2 1.0 0.8 0.6 0.4 0.2 0.0 -60 Normalized to 1.0 at TA = 25 C IF = 1.0 mA, VCE = 5.0 V -40 -20 0 20 40 60 80 100
12 V 10.0
1.0 -60 -40 -20 0 20 40 60 Ambient Temperature, TA (C) 80 100
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Ambient Temperature, TA (C)
Fig. 5 Collector to Emitter Dark Current vs. Ambient Temperature
Fig. 8 Normalized Output Current vs. Ambient Temperature
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Document Number 83687 Rev. 1.4, 20-Apr-04
VISHAY
SFH6916
Vishay Semiconductors
Current Transfer Ratio, CTR (%)
300 VCE = 5.0 V 250 200 150 100 50 0 0.1 Typical for CTR=250% tpdon Typical for CTR=150% Output 10% 50% 90% 1.0 10.0 Forward Current, IF (mA) 50 100.0
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Input ton tpdoff td tf ts tr 10% 50% 90% toff
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Fig. 9 Current Transfer Ratio vs. Forward Current
Fig. 12 Switching Time Measurement
100.0
Switching Time, (s)
ton 10.0 toff td 1.0 ts
0.1 0
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VCC = 5.0 V IC = 2.0 mA 500 1000 1500 2000 Load Resistance, RL (ohm)
Fig. 10 Switching Time vs. Load Resistance
1000
Switching Time, (s)
100
IF = 5.0 mA VCC = 5.0 V TA = 25 C CTR = 150%
tf ts
10 tr td
1
0 100
iSFH6916_11
1000 10000 Load Resistance, RL ()
100000
Fig. 11 Switching Time vs. Load Resistance
Document Number 83687 Rev. 1.4, 20-Apr-04
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SFH6916
Vishay Semiconductors Package Dimensions in Inches (mm)
R .010 (.25)
VISHAY
0.19 (4.83) 0.17 (4.32)
.050 (1.27)
.014 (.36) .036 (.91) .200 (5.08) .290 (7.37) .045 (1.14)
0.434 (11.02) 0.414 (10.52) ISO Method A 0.034 (0.87) 0.024 (0.61) 0.017 (0.43) 0.013 (0.33) 0.008 (0.20) 0.004 (0.10)
0.220 (5.59) 0.200 (5.08) 40 10
0.080 (2.03) 0.075 (1.91) 0.000 (0.00) 0.005 (0.13)
0.018 (0.46) 0.014 (0.36)
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0.200 (5.08) 0.220 (5.59) 0.280 (7.11) 0.260 (6.60)
0.055 (1.40) 0.045 (1.14)
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Document Number 83687 Rev. 1.4, 20-Apr-04
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.
SFH6916
Vishay Semiconductors
2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83687 Rev. 1.4, 20-Apr-04
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